smd type ic www.kexin.com.cn 1 mosfet smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source mos field effect transistor 2SK3641 features low on-state resistance r ds(on)1 =14 m max. (v gs =10v,i d =18a) r ds(on)2 =25 m max. (v gs =4.5v,i d =15a) low c iss :c iss = 930 pf typ. absolute maximum ratings ta = 25 parameter symbol rating unit draintosourcevoltage v dss 30 v gate to source voltage v gss 20 v i d 36 a i dp * 140 a power dissipation t c =25 29 t a =25 1.0 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =30v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate cut off voltage v gs(off) v ds =10v,i d =1ma 1.5 2.5 v forward transfer admittance y fs v ds =10v,i d =18a 5.5 11 s r ds(on)1 v gs =10v,i d =18a 11 14 m r ds(on)2 v gs =4.5v,i d =15a 17 25 m input capacitance c iss 930 pf output capacitance c oss 250 pf reverse transfer capacitance c rss 160 pf turn-on delay time t on 9.4 ns rise time t r 8.6 ns turn-off delay time t off 34 ns fall time tf 11 ns total gate charge q g 22 nc gate to source charge q gs 3.6 nc gate to drain charge q gd 7.4 nc body diode forward voltage note v f(s-d) i f =36a,v gs =0v 1.0 v reverse recovery time t rr i f =36a,v gs =0v 24 ns reverse recovery charge q rr d i /d t = 100 a/ s 15 nc v dd = 24v v gs =10v i d =36a v ds =10v,v gs =0,f=1mhz i d =18a,v gs(on) =15v,r g =10 ,v dd =10v drain to source on-state resistance
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